| PART |
Description |
Maker |
| AOD421 |
P-Channel Enhancement Mode Field Effect Transisto
|
Alpha & Omega Semiconductors
|
| TPC8203 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TPCP8301 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSコ)
|
Toshiba Semiconductor
|
| TPC8202 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE−MOSVI)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ440 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCA8A04-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
| HN1K06FU |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC8201 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| TPC6108 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SSM3J328R-14 |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
|
Toshiba Semiconductor
|
| TPC8102 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)
|
TOSHIBA[Toshiba Semiconductor]
|
